AlGaN/GaN HEMT E类功率放大器设计

论文摘要

无线通讯技术的迅猛发展对功率放大器功率、频率、高温特性提出了更高的要求,第三代（宽禁带）半导体材料GaN以其优异的电学特性使得AlGaN/GaN HEMT功率放大器成为研究热点。本论文主要建立了AlGaN/GaN HEMT等效电路模型并基于模型设计GaN功率放大器。本文首先对参数提取方法进行研究,针对传统模拟退火算法在优化速度上的不足,对模拟退火算法在扰动机制、退火方式、记忆功能和回火机制等方面进行改进,提出了一种改进模拟退火算法,Matlab计算结果表明该算法较改进前速度提高约20%。接着从AlGaN/GaN HEMT基本原理出发,通过在等效电路拓扑结构上增加RC子电路以描述电流崩塌,并在大信号模型上增添拟合参数的温度特性以描述自加热效应,改进了AlGaN/GaN HEMT等效电路模型。I-V仿真曲线与测试结果相比误差在5%以内,电流崩塌仿真结果与测试结果相比误差小于15%。基于建立的AlGaN/GaN HEMT等效电路模型设计了一个可工作在2.4GHz频率的采用准F类放大器作为功率放大器增益驱动级的高效率AlGaN/GaN HEMT E类单端两级功率放大器。ADS仿真结果显示其输出功率达到33dBm,功率增益为28dB,功率附加效率达到66%。

论文目录

摘要

ABSTRACT

第一章引言

1.1 选题背景和研究意义

1.2 国内外研究动态

1.3 论文的主要研究内容

第二章 AlGaN/GaN HEMT 等效电路模型分析与建立

2.1 AlGaN/GaN HEMT 器件基本理论

2.2 模拟退火算法的改进

2.3 AlGaN/GaN HEMT 器件建模分析

2.4 小信号等效电路模型参数提取

2.5 大信号等效电路模型参数提取

2.6 AlGaN/GaN HEMT 模型的验证

第三章 AlGaN/GaN HEMT 功率放大器设计

3.1 功率放大器的研究

3.2 功率放大器的设计

3.3 仿真结果与分析

第四章结论

致谢

参考文献

攻读硕士期间取得的研究成果

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标签：模拟退火算法论文; 等效电路模型论文; 电流崩塌论文; 类功率放大器论文;

AlGaN/GaN HEMT E类功率放大器设计

论文摘要

论文目录

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