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作者章航程,陈成克,梅盈爽,李晓,蒋梅燕,胡晓君（2019）在《Micron-sized diamond particles containing Ge-V and Si-V color centers》一文中研究指出：Micron-sized diamond particles containing germanium-vacancy(Ge-V) color centers with a zero-photon line(ZPL)around 602.3 nm are successfully grown using hot filament chemical vapor deposition.The crystal morphology changes from icosahedron to truncated octahedron and decahedron, finally becomes spherical with the growth pressure increase.Due to the chamber containing Si, all diamond particles contain silicon-vacancy(Si-V) color centers.High growth pressure contributes to the formation of Ge-V and Si-V in diamonds.With prolonging growth time, the change in the full width at half maximum(FWHM) of the diamond peak is small, which shows that the concentration of Ge-V and Si-V centers nearly maintains a constant.The FWHM of the Ge-V ZPL is around 4 nm, which is smaller than that reported, suggesting that the Ge-V center has a more perfect structure.Ge-V and Si-V photoluminescence(PL) intensities increase with the prolonging growth time due to the increased diamond content and reduced content of sp~2-bonded carbon and trans-polyacetylene.In summary, increasing the growth pressure and prolonging the growth time are beneficial to enhance the Ge-V and Si-V PL intensities.
Abstract
Micron-sized diamond particles containing germanium-vacancy(Ge-V) color centers with a zero-photon line(ZPL)around 602.3 nm are successfully grown using hot filament chemical vapor deposition.The crystal morphology changes from icosahedron to truncated octahedron and decahedron, finally becomes spherical with the growth pressure increase.Due to the chamber containing Si, all diamond particles contain silicon-vacancy(Si-V) color centers.High growth pressure contributes to the formation of Ge-V and Si-V in diamonds.With prolonging growth time, the change in the full width at half maximum(FWHM) of the diamond peak is small, which shows that the concentration of Ge-V and Si-V centers nearly maintains a constant.The FWHM of the Ge-V ZPL is around 4 nm, which is smaller than that reported, suggesting that the Ge-V center has a more perfect structure.Ge-V and Si-V photoluminescence(PL) intensities increase with the prolonging growth time due to the increased diamond content and reduced content of sp~2-bonded carbon and trans-polyacetylene.In summary, increasing the growth pressure and prolonging the growth time are beneficial to enhance the Ge-V and Si-V PL intensities.
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论文作者分别是来自Chinese Physics B的章航程,陈成克,梅盈爽,李晓,蒋梅燕,胡晓君，发表于刊物Chinese Physics B2019年07期论文，是一篇关于,Chinese Physics B2019年07期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自Chinese Physics B2019年07期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。