本文主要研究内容
作者（2019）在《Surface treatments of CdGeAs2 single crystals》一文中研究指出：The performances of second harmonic generation（SHG）and optical parametric oscillator（OPO）in CdGeAs2 crystal are strongly influenced by surface quality.In this paper,the surfaces of samples were treated by mechanical polishing（MP）,chemical polishing（CP）,chemical-mechanical polishing（CMP）and CP following CMP closely（CMP + CP）.Then,the surface state was characterized by optical microscopy（OM）,scanning electron microscopy（SEM）,atomic force microscopy（AFM）and X-ray photoelectron spectroscopy（XPS）.AFM measurements show that an ultra-smooth surface is achieved after CMP+ CP treatment and the roughness value is 0.98 nm.Meanwhile,the roughness of the surfaces treated by MP,CP and CMP are 4.53,2.83 and 1.38 nm,respectively.By XRD rocking curves,the diffraction peak which belongs to the wafer treated by CMP+CP is the highest in intensity and best symmetrical in shape.XPS analysis indicates that Ge4+ proportions of GeO2 in total Ge content of CdGeAs2 wafers’ surface after MP,CP,CMP and CMP + CP treatment are 27.6%,42.8%,6.1% and 30.3%,respectively.
Abstract
The performances of second harmonic generation（SHG）and optical parametric oscillator（OPO）in CdGeAs2 crystal are strongly influenced by surface quality.In this paper,the surfaces of samples were treated by mechanical polishing（MP）,chemical polishing（CP）,chemical-mechanical polishing（CMP）and CP following CMP closely（CMP + CP）.Then,the surface state was characterized by optical microscopy（OM）,scanning electron microscopy（SEM）,atomic force microscopy（AFM）and X-ray photoelectron spectroscopy（XPS）.AFM measurements show that an ultra-smooth surface is achieved after CMP+ CP treatment and the roughness value is 0.98 nm.Meanwhile,the roughness of the surfaces treated by MP,CP and CMP are 4.53,2.83 and 1.38 nm,respectively.By XRD rocking curves,the diffraction peak which belongs to the wafer treated by CMP+CP is the highest in intensity and best symmetrical in shape.XPS analysis indicates that Ge4+ proportions of GeO2 in total Ge content of CdGeAs2 wafers’ surface after MP,CP,CMP and CMP + CP treatment are 27.6%,42.8%,6.1% and 30.3%,respectively.
论文参考文献
论文详细介绍
论文作者分别是来自Rare Metals的，发表于刊物Rare Metals2019年07期论文，是一篇关于,Rare Metals2019年07期论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自Rare Metals2019年07期论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。