论文摘要
近些年来,固态半导体器件在微波功率放大器领域正在逐步取代真空电子管,其中AlGaN/GaN HEMT具有高跨导,高饱和电流,噪声低,高击穿电压,耐高温等特点,是取代真空电子管的主要候选者。本文从器件结构,极化效应,器件的直流和高频性能等方面对AlGaN/GaN HEMT进行了建模,仿真和优化。在AlGaN/GaN HEMT建模方面,论文首先应用了ISE-TCAD软件建立了AlGaN/GaN HEMT仿真模型。为了提高仿真的精度,选取了更适合于仿真的GaN、AlN和AlGaN的材料参数。在此基础上设定了仿真所需要的物理方程和模型,包括泊松方程,连续性方程,载流子统计模型（费米-狄拉克分布）,输运模型（流体力学模型）和复合模型（肖特基-里德-霍尔模型）。论文对所建立的AlGaN/GaN HEMT修正模型进行了综合仿真,从器件结构、电荷分布、电流特性和频率特性等几个方面得出了能带图、二维电子气密度、转移特性曲线和输出特性等关系。论文把所得到的仿真结果和相关参考文献提供的实验值进行了对比,论文结果与文献实验值数值趋势基本吻合,从而初步验证了仿真结果的正确性,同时论文还对仿真结果与文献中实验值的部分偏差原因进行了初步的分析。论文利用所建立的HEMT模型对器件极化电荷密度、AlGaN表面施主陷阱密度、接触电阻、AlGaN层厚度和栅源距离等方面进行了优化。优化基于对主要参数进行扫描,根据参数与器件性能的变化关系,在工艺允许范围内选取优化参数,从阈值电压、饱和漏电流和峰值跨导等方面提高了器件的性能。论文工作对AlGaN/GaN HEMT器件的建模、仿真和优化进行了有益的尝试,初步得出了优化器件的指导原则和方法,在论文工作的基础上,后续更深入的研究可以从更准确的极化模型和热电子效应对器件的影响等方面展开。
论文目录
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