AlGaN/GaN HEMT器件建模及功率合成研究

论文摘要

GaN是近年来迅速发展起来的第三代宽禁带半导体材料之一,AlGaN/GaNHEMT在高温、大功率、高频、抗辐射等领域有着广阔的应用前景。准确的器件建模对提高RF和微波电路设计的成功率、缩短电路研制周期是非常重要的。本论文建立了AlGaN/GaN HEMT器件的等效电路模型,并以建立的模型为基础,设计了AlGaN/GaN HEMT微波功率合成电路。首先,本文基于传统HEMT小信号模型,提出了适合AlGaN/GaN HEMT的小信号等效电路拓扑结构和精确的小信号模型参数提取方法。建立的小信号等效电路模型具有比较简单、精确和宽带（0-10GHz）等特性,为大信号分析提供必要的数据支持。然后,从几种常见的HEMT器件大信号直流I-V特性模型出发,针对GaNHEMT器件较为显著的自热效应,本文以Curtice立方大信号模型为基础,通过修改其大信号等效电路拓扑结构,增加表征器件自热效应的热电路;并改进模型中I-V特性表达式,引入器件温度对输出特性的影响,使器件I-V特性模型更能准确地反映器件实际的工作特性。接着详细地分析了AlGaN/GaN HEMT器件大信号电容模型。最后,为了获得大的输出功率,利用混合电路将多路放大器并联实现功率合成。在本文建立的AlGaN/GaN HEMT器件模型的基础上,利用微带型Wilkinson功率分配器/合成器,设计了GaN HEMT微波功率合成电路。电路在3.5GHz中心频率下,最大输出功率达到3.5W,功率附加效率为32%。

论文目录

摘要

ABSTRACT

第一章绪论

1.1 选题背景

1.2 国内外研究动态

1.3 本文的主要研究内容

第二章 AlGaN/GaN HEMT小信号模型分析

2.1 AlGaN/GaN HEMT器件结构与工作原理

2.2 HEMT小信号模型

2.3 AlGaN/GaN HEMT小信号等效电路模型分析

2.3.1 GaN HEMT小信号模型寄生参数提取

2.3.2 GaN HEMT小信号模型本征参数的提取

2.3.3 GaN HEMT小信号模型元件参数优化

2.4 模型验证

第三章 AlGaN/GaN HEMT大信号模型分析

3.1 HEMT大信号模型

3.2 GaN HEMT大信号I-V特性模型

3.2.1 几种常见的大信号I-V特性模型

3.2.2 一种改进的大信号I-V特性模型

3.3 GaN HEMT非线性电容模型

gd和栅源电流I_gs模型'>3.4 漏栅电流I_gd和栅源电流I_gs模型

第四章 GaN HEMT微波功率合成研究

4.1 微波功率分配器/合成器的分析与设计

4.1.1 微带线

4.1.2 Wilkinson功率分配器/合成器分析

4.1.3 微带型Wilkinson功率分配器/合成器的设计与仿真

4.2 GaN HEMT微波功率合成电路的设计与分析

4.2.1 GaN HEMT单管微波功率放大器的设计与分析

4.2.2 双管微波功率合成电路的设计与分析

第五章结论

致谢

参考文献

在学期间取得的研究成果

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标签：等效电路模型论文; 自热效应论文; 功率合成论文;

AlGaN/GaN HEMT器件建模及功率合成研究

论文摘要

论文目录

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