论文摘要
氮化镓（GaN）是近十几年来迅速发展起来的第三代宽禁带半导体材料之一,其化学性质稳定、耐高温、耐腐蚀,非常适合于制作抗辐射、高频、大功率和高密度集成的电子器件以及蓝光、绿光和紫外光电子器件。所有这些优良的性质,很好的弥补了前两代Si和AsGa等半导体材料本身固有的缺点,从而成为飞速发展的研究前沿。AlGaN/GaN高电子迁移率晶体管（HEMTs）,是以AlGaN/GaN异质结材料为基础而制造的GaN基器件。与传统的MESFET器件相比,AlGaN/GaN HEMTs具有高跨导、高饱和电流以及高截止频率的优良特性。另外,实验证明,GaN基HEMT在1000K的高温下仍然保持着良好的直流特性。从而减少甚至取消冷却系统,使系统的体积和重量大大降低,效率大大提高。由于GaN材料的热导率较高、热容量大,特别是它有着较高的击穿电场。这极大地提高了GaN器件的耐压容量、电流密度,使GaN功率器件可以工作在大功率的条件下。随着GaN材料制造工艺的不断改进和制造成本的下降,AlGaN/GaN HEMT器件必将在高温、大功率、高频、光电子、抗辐照等领域取得广泛的应用。虽然人们对GaN基微波功率器件的研究工作已经持续了多年,深度和广度已经达到了前所未有的水平,但是真正商业化的AlGaN/GaN HEMT功率器件仍然尚未问世。这里面有诸多原因。除了可靠性及GaN缺陷密度等问题尚未解决外,当HEMT器件工作于大功率、高温的环境时,会产生明显的“自热效应”。引起附加的功率损失和电流输出能力的下降,进而降低器件的微波性能,甚至引起功能失效。另一方面对于在微波领域有着良好应用前景的AlGaN/GaN HEMT,由于GaN基器件发展历史相对较短,对AlGaN/GaN HEMT的大信号小信号建模理论研究成果较少,还主要沿用MESFET的相关模型。由于HEMT与MESFET的工作原理有所不同,在加上AlGaN/GaN HEMT器件有其自身的特点,所以套用这些模型误差在所难免。因此建立适合AlGaN/GaN HEMT的大小信号模型是目前理论研究需要努力的方向。以上这些问题的研究都是推进AlGaN/GaN HEMT商业化生产进程中十分重要的步骤。本课题围绕以下几个方面展开具体工作:（1）针对HEMT器件的自热效应,提出了一种用于分析AlGaN/GaN HEMT I-V特性的数值计算模型,在算法上转化为迭代求解泊松方程、薛定谔方程和费米分布。分析了自热效应的起因,以及这种效应对二维电子气浓度分布和漏电流的影响。在此过程中引入了一系列与温度和Al含量有关的参数,如导带断续、载流子
论文目录
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标签：氮化镓论文; 高电子迁移率晶体管论文; 异质结论文; 极化效应论文; 二维电子气论文; 数值模拟论文; 自热效应论文; 跨导论文; 大信号模型论文; 小信号模型论文;