硅衬底上AlGaN/GaN异质结材料的生长研究

2020-12-16阅读(550)

论文摘要

氮化镓(GaN)是近年来发展最为迅速的第三代半导体材料之一。由于GaN的化学性质稳定,耐高温,直接带隙宽度大,高频大功率等特点,能够很好的弥补Si和AsGa等半导体材料的缺点,成为下一代半导体材料器件的主要应用材料,国内外研究的热点。AlGaN/GaN基高电子迁移率晶体管(HEMT)是以AlGaN/GaN异质结为基础的GaN微波功率器件,与传统的微波器件相比,HEMT具有高跨导,高饱和电流和高截止频率等优点,成为下一代通信行业中主要使用的微波器件。国内外已经对GaN材料进行了很多年的研究,并且达到了一定的商业化应用,但是仍然存在很多问题需要解决。本文首先介绍了国内外GaN外延材料的研究现状和应用前景,然后介绍了GaN晶体生长所采用的两步生长方案的每个步骤和生长过程,最后简述了生长的GaN晶体中的缺陷类型和对GaN晶体的影响。在实验部分,本论文详细论述了Si衬底上生长GaN晶体所使用的不同缓冲层,并且进行多次实验找到了使用不同缓冲层所生长GaN的窗口值,并且给出了所生长样品的XRD,AFM和金相显微镜所测量的结果。对于2英寸的Si生长GaN我们并且横向对比了各种缓冲层的优劣,最后发现使用渐变AlGaN缓冲层所生长的GaN外延层晶体质量最好。最后我们研究了使用超晶格来生长GaN外延层,为下一步生长大尺寸的GaN外延晶体研究开展了前期研究。在上一步实验基础上,我们生长了插入AlN阻挡层的AlGaN/GaN异质结,并且针对AlGaN层的厚度和组分进行了优化,生长出了晶体质量和表面形貌达到国际水平的AlGaN/GaN异质结,为下一步HEMT器件的制作打下了基础。

论文目录

摘要

Abstract

目录

1 绪论

1.1 GaN 在光学和电学设备上的商业应用

1.2 GaN 异质结使用缓存层生长

1.3 本论文的主要研究内容

2 Si 衬底上 AlGaN/GaN 异质结生长背景

2.1 外延生长

2.2 GaN 材料的选择

2.3 衬底的选择

2.4 Si 衬底上生长AlGaN/GaN 异质结的难点

2.5 Si 衬底上AlGaN/GaN 中异质结的缺陷

2.6 本章小结

3 Si 衬底上GaN 外延层的生长

3.1 有机金属化学气相沉积法

3.2 材料表征

3.3 低温AlN（LT-AlN）缓冲层生长方案

3.4 高温AlN（HT-AlN）缓冲层生长方案

3.5 组分渐变AlGaN/AlN 缓冲层生长方案

3.6 超晶格缓冲层生长方案

3.7 超晶格插入层生长方案

3.8 本章小结

4 Si 衬底上 AlGaN/GaN 异质结的生长

4.1 HEMT 基本原理

4.2 AlGaN/GaN 异质结的生长

4.3 AlGaN/GaN 异质结表征特性

4.4 本章小结

5 总结

致谢

参考文献

附录1 攻读学位期间发表论文目录

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标签：氮化镓论文; 高电子迁移率晶体管论文; 缓冲层论文; 异质结论文;

硅衬底上AlGaN/GaN异质结材料的生长研究

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