本文主要研究内容
作者杜倩倩（2019）在《氧化锌微纳米线及异质结材料与光电器件》一文中研究指出：氧化锌(ZnO)是一种Ⅱ-Ⅵ族直接带隙n型半导体,室温下禁带宽度约3.37 eV,激子束缚能约60 meV,是短波光电器件的优选材料。与体材料相比,ZnO微纳米线具有更大的比表面积、表面态密度和载流子迁移率,在发光和紫外探测领域极具应用前景。但目前报道的多数ZnO纳米线光电探测器存在量子效率低、光电响应速度慢及器件制备复杂、阵列集成困难等问题。针对以上问题,本文作者开展了 ZnO微纳米线的可控制备、异质结构筑及不同类型的光电器件加工,进行器件性能调控和相关物理机制分析,并创新性地将ZnO纳米线光电探测扩展到光电存储领域。主要的研究成果如下:1.ZnO纳米线的制备与光电性能研究采用化学气相沉积(CVD)方法制备了 ZnO纳米线,通过改变管内压强、氧气流速等参数实现ZnO不同形貌结构的调控;利用湿法转移技术,将ZnO纳米线分散转移到目标衬底上,通过优化分散及转移步骤实现高质量的单根ZnO纳米线晶体管的制备。该器件呈现典型的耗尽型n型半导体特征,实验结果表明其电流开关比达1O4,迁移率约3535cmV-1s-1。单根ZnO纳米线器件对355 nm紫外光的响应度高达106A/W,证明其具有良好的紫外光电性能;并且可通过栅压调控器件的响应速度。2.基于ZnO纳米线晶体管的光电存储器系统研究了 ZnO纳米线晶体管的电学回滞行为。探究了在光照下,栅压扫描速度、扫描范围、测试环境等因素对器件回滞现象的影响,研究其相关动力学过程,建立相关理论模型。实验证明,在有氧环境下,光照会极大促进栅压对回滞现象的调控作用。最后,作者首次演示了 ZnO纳米线非易失性光电存储器,该存储器表现出较大的开关电流比和可靠的编程/擦除重复性。创新性地将ZnO纳米线器件由光电探测拓展到光电存储领域,这对开发兼具光电探测和存储功能的新型器件具有一定的参考意义。3.自组装ZnO纳米桥/红荧烯异质结光电探测器ZnO纳米线湿法转移的随机性及冗杂的加工流程限制了器件的可扩展性,针对此挑战,作者采用Au膜图案作为催化剂和电极,通过简单一步法完成了性能优异且可规模制备的ZnO纳米桥紫外探测器阵列;将p型红荧烯(rubrene)和n型的ZnO纳米桥相互耦合,构建了交错型(type Ⅱ)ZnO纳米桥/rubrene异质结器件。利用异质结界面内建电场,显著提高光生电子-空穴对的分离效率,提高了器件的响应度;同时,利用ZnO和红荧烯的能带互补,器件的响应光谱从紫外波段延伸到可见光范围。此项研究,对开发高灵敏、低成本的宽谱光电探测器具有一定的参考价值。4.ZnO微米线和ZnO-ZnGa2O4同轴异质结探测器为进一步降低纳米线器件对微加工技术的依赖,论文开展了尺寸更加宏观,器件加工简单易行的ZnO微米线的研究。利用CVD方法合成了 ZnO微米线,XRD、Raman和PL结果证实其结晶质量较高,并表现出灵敏的光电、压电特性及优异的机械柔韧性。通过改变源材料中ZnO与Ga203比例,采用一步合成技术生长了 ZnO-ZnGa2O4同轴异质结微米线。实验结果表明:在360 nm光照下,相比纯ZnO微米线,ZnO-ZnGa2O4同轴异质结微米线的响应度提高了近两个数量级,达1900A/W;特别是在深紫外光270 nm照射下,器件响应度高达4300A/W。主要原因是异质结界面内建电场,有利于光生电子-空穴的高效分离,提高器件对紫外及深紫外的灵敏度和响应度。对柔性异质结器件进行数百次弯折,仍能保持较好的电学特性,说明器件可应用于未来的柔性电子和光电子领域。综上所述,本文系统地研究了 ZnO微纳米线及异质结器件的光电性能及界面载流子动力学,并提出了优化ZnO光电探测器、存储器性能的可行方法,该研究工作对设计高性能ZnO光电器件及新型存储器件具有重要参考意义。
Abstract
yang hua xin (ZnO)shi yi chong Ⅱ-Ⅵzu zhi jie dai xi nxing ban dao ti ,shi wen xia jin dai kuan du yao 3.37 eV,ji zi shu fu neng yao 60 meV,shi duan bo guang dian qi jian de you shua cai liao 。yu ti cai liao xiang bi ,ZnOwei na mi xian ju you geng da de bi biao mian ji 、biao mian tai mi du he zai liu zi qian yi lv ,zai fa guang he zi wai tan ce ling yu ji ju ying yong qian jing 。dan mu qian bao dao de duo shu ZnOna mi xian guang dian tan ce qi cun zai liang zi xiao lv di 、guang dian xiang ying su du man ji qi jian zhi bei fu za 、zhen lie ji cheng kun nan deng wen ti 。zhen dui yi shang wen ti ,ben wen zuo zhe kai zhan le ZnOwei na mi xian de ke kong zhi bei 、yi zhi jie gou zhu ji bu tong lei xing de guang dian qi jian jia gong ,jin hang qi jian xing neng diao kong he xiang guan wu li ji zhi fen xi ,bing chuang xin xing de jiang ZnOna mi xian guang dian tan ce kuo zhan dao guang dian cun chu ling yu 。zhu yao de yan jiu cheng guo ru xia :1.ZnOna mi xian de zhi bei yu guang dian xing neng yan jiu cai yong hua xue qi xiang chen ji (CVD)fang fa zhi bei le ZnOna mi xian ,tong guo gai bian guan nei ya jiang 、yang qi liu su deng can shu shi xian ZnObu tong xing mao jie gou de diao kong ;li yong shi fa zhuai yi ji shu ,jiang ZnOna mi xian fen san zhuai yi dao mu biao chen de shang ,tong guo you hua fen san ji zhuai yi bu zhou shi xian gao zhi liang de chan gen ZnOna mi xian jing ti guan de zhi bei 。gai qi jian cheng xian dian xing de hao jin xing nxing ban dao ti te zheng ,shi yan jie guo biao ming ji dian liu kai guan bi da 1O4,qian yi lv yao 3535cmV-1s-1。chan gen ZnOna mi xian qi jian dui 355 nmzi wai guang de xiang ying du gao da 106A/W,zheng ming ji ju you liang hao de zi wai guang dian xing neng ;bing ju ke tong guo shan ya diao kong qi jian de xiang ying su du 。2.ji yu ZnOna mi xian jing ti guan de guang dian cun chu qi ji tong yan jiu le ZnOna mi xian jing ti guan de dian xue hui zhi hang wei 。tan jiu le zai guang zhao xia ,shan ya sao miao su du 、sao miao fan wei 、ce shi huan jing deng yin su dui qi jian hui zhi xian xiang de ying xiang ,yan jiu ji xiang guan dong li xue guo cheng ,jian li xiang guan li lun mo xing 。shi yan zheng ming ,zai you yang huan jing xia ,guang zhao hui ji da cu jin shan ya dui hui zhi xian xiang de diao kong zuo yong 。zui hou ,zuo zhe shou ci yan shi le ZnOna mi xian fei yi shi xing guang dian cun chu qi ,gai cun chu qi biao xian chu jiao da de kai guan dian liu bi he ke kao de bian cheng /ca chu chong fu xing 。chuang xin xing de jiang ZnOna mi xian qi jian you guang dian tan ce ta zhan dao guang dian cun chu ling yu ,zhe dui kai fa jian ju guang dian tan ce he cun chu gong neng de xin xing qi jian ju you yi ding de can kao yi yi 。3.zi zu zhuang ZnOna mi qiao /gong ying xi yi zhi jie guang dian tan ce qi ZnOna mi xian shi fa zhuai yi de sui ji xing ji rong za de jia gong liu cheng xian zhi le qi jian de ke kuo zhan xing ,zhen dui ci tiao zhan ,zuo zhe cai yong Aumo tu an zuo wei cui hua ji he dian ji ,tong guo jian chan yi bu fa wan cheng le xing neng you yi ju ke gui mo zhi bei de ZnOna mi qiao zi wai tan ce qi zhen lie ;jiang pxing gong ying xi (rubrene)he nxing de ZnOna mi qiao xiang hu ou ge ,gou jian le jiao cuo xing (type Ⅱ)ZnOna mi qiao /rubreneyi zhi jie qi jian 。li yong yi zhi jie jie mian nei jian dian chang ,xian zhe di gao guang sheng dian zi -kong xue dui de fen li xiao lv ,di gao le qi jian de xiang ying du ;tong shi ,li yong ZnOhe gong ying xi de neng dai hu bu ,qi jian de xiang ying guang pu cong zi wai bo duan yan shen dao ke jian guang fan wei 。ci xiang yan jiu ,dui kai fa gao ling min 、di cheng ben de kuan pu guang dian tan ce qi ju you yi ding de can kao jia zhi 。4.ZnOwei mi xian he ZnO-ZnGa2O4tong zhou yi zhi jie tan ce qi wei jin yi bu jiang di na mi xian qi jian dui wei jia gong ji shu de yi lai ,lun wen kai zhan le che cun geng jia hong guan ,qi jian jia gong jian chan yi hang de ZnOwei mi xian de yan jiu 。li yong CVDfang fa ge cheng le ZnOwei mi xian ,XRD、Ramanhe PLjie guo zheng shi ji jie jing zhi liang jiao gao ,bing biao xian chu ling min de guang dian 、ya dian te xing ji you yi de ji xie rou ren xing 。tong guo gai bian yuan cai liao zhong ZnOyu Ga203bi li ,cai yong yi bu ge cheng ji shu sheng chang le ZnO-ZnGa2O4tong zhou yi zhi jie wei mi xian 。shi yan jie guo biao ming :zai 360 nmguang zhao xia ,xiang bi chun ZnOwei mi xian ,ZnO-ZnGa2O4tong zhou yi zhi jie wei mi xian de xiang ying du di gao le jin liang ge shu liang ji ,da 1900A/W;te bie shi zai shen zi wai guang 270 nmzhao she xia ,qi jian xiang ying du gao da 4300A/W。zhu yao yuan yin shi yi zhi jie jie mian nei jian dian chang ,you li yu guang sheng dian zi -kong xue de gao xiao fen li ,di gao qi jian dui zi wai ji shen zi wai de ling min du he xiang ying du 。dui rou xing yi zhi jie qi jian jin hang shu bai ci wan she ,reng neng bao chi jiao hao de dian xue te xing ,shui ming qi jian ke ying yong yu wei lai de rou xing dian zi he guang dian zi ling yu 。zeng shang suo shu ,ben wen ji tong de yan jiu le ZnOwei na mi xian ji yi zhi jie qi jian de guang dian xing neng ji jie mian zai liu zi dong li xue ,bing di chu le you hua ZnOguang dian tan ce qi 、cun chu qi xing neng de ke hang fang fa ,gai yan jiu gong zuo dui she ji gao xing neng ZnOguang dian qi jian ji xin xing cun chu qi jian ju you chong yao can kao yi yi 。
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论文作者分别是来自南京大学的杜倩倩，发表于刊物南京大学2019-10-28论文，是一篇关于存储器论文,纳米桥论文,异质结论文,微米线论文,南京大学2019-10-28论文的文章。本文可供学术参考使用，各位学者可以免费参考阅读下载，文章观点不代表本站观点，资料来自南京大学2019-10-28论文网站，若本站收录的文献无意侵犯了您的著作版权，请联系我们删除。
标签：存储器论文; 纳米桥论文; 异质结论文; 微米线论文; 南京大学2019-10-28论文;