本文主要研究内容
作者李捷（2019）在《一种SOI硅片的制备方法》一文中研究指出：本文针对利用热微波切割法(TM-SOI)获得的SOI(Silicon On Insulator)硅片,采用HCl化学刻蚀去除SOI损伤层和减小粗糙度,获得高质量的SOI硅片。不但能够去除利用热微波切割法(TM-SOI)制备的SOI(Silicon On Insulator)层表面的损伤层、表面粗糙现象,同时能够获得极高表面平坦度的SOI硅片。
Abstract
ben wen zhen dui li yong re wei bo qie ge fa (TM-SOI)huo de de SOI(Silicon On Insulator)gui pian ,cai yong HClhua xue ke shi qu chu SOIsun shang ceng he jian xiao cu cao du ,huo de gao zhi liang de SOIgui pian 。bu dan neng gou qu chu li yong re wei bo qie ge fa (TM-SOI)zhi bei de SOI(Silicon On Insulator)ceng biao mian de sun shang ceng 、biao mian cu cao xian xiang ,tong shi neng gou huo de ji gao biao mian ping tan du de SOIgui pian 。
论文参考文献
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论文详细介绍
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